Compound Semiconductor Technologies

Solutions Across The Spectrum

CST has extensive experience and capability in the design of epitaxial wafer structures and devices. Our experienced design team will examine your requirements and advise on suitable wafer structures and a fabrication process route to achieve the device performance necessary for your application. CST can also develop new process technologies for your innovative devices.

Two Varian 3 inch Modular Gen II solid source MBE systems, both fitted with a full complement of furnaces for the growth of III-V semiconductors containing Al, Ga, In and As. Si is used for n-type doping and Be for p-type.

To keep CST at the leading edge of developments in the compound semiconductor industry the company has in place collaborative relationships with the Universities of Strathclyde and Glasgow. Both these universities have research teams of international standing in compound semiconductors.

An Aixtron 200/4 RF-S MOCVD system is used for the growth of gallium nitride (GaN) and ternary nitride semiconductor alloys containing indium or alluminium.